Hsiang-wei Lin

5 Patents

• US125640252026

  Interconnect with Redeposited Metal Capping and Method Forming Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US125060012025

  Low-k Feature Formation Processes and Structures Formed Thereby

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US123343952025

  Semiconductor Structure and Method for Forming the Same

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US122495592025

  Conductive Features with Air Spacer and Method of Forming Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US117053272023

  Low-k Feature Formation Processes and Structures Formed Thereby

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites