13 Patents
- US125074902025Semiconductor Device Including Germanium Region Disposed in Semiconductor Substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124956322025Semiconductor Image Sensor and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123639692025Passivation Layer for Epitaxial Semiconductor Process
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US121660542024Image Sensor with Passivation Layer for Dark Current Reduction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121488532024Germanium-based Sensor with Junction-gate Field Effect Transistor and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121259342024Method of Manufacturing an Optical Sensor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US119089002024Passivation Layer for Epitaxial Semiconductor Process
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119013932024Image Sensor and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US118552372023Germanium-based Sensor with Junction-gate Field Effect Transistor and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US118483452023Image Sensor with Passivation Layer for Dark Current Reduction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116007372023Germanium-based Sensor with Junction-gate Field Effect Transistor and Method of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites