21 Patents
- US126107492026Method of Forming a Resistive Memory Device with Ultra-thin Barrier Layer
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125884292026Resistive Memory Device Including a Silicon Oxide Base Spacer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US125076022025RRAM with Post-patterned Treated Memory Films to Provide Improved Endurance Characteristics and Methods for Forming
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124242562025Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US123100362025Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122323362025Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US120756362024Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119800412024Method to Form Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119615452024Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118942672024Method for Fabricating Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118897052024Interconnect Landing Method for RRAM Technology
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118567972023Resistive Switching Random Access Memory with Asymmetric Source and Drain
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118568012023Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118442862023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118390902023Memory Cells Separated by a Void-free Dielectric Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117514852023Flat Bottom Electrode via (BEVA) Top Surface for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232922023RRAM Cell Structure with Laterally Offset BEVA/TEVA
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232942023Memory Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115452022023Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites