Houqiang Fu

2 Patents

• US121599432024

  Gan Vertical-channel Junction Field-effect Transistors with Regrown P-gan by Metal Organic Chemical Vapor Deposition (MOCVD)

  Arizona Board Of Regents On Behalf Of Arizona State University

  0 cites
• US116264832023

  Low-leakage Regrown Gan P-n Junctions for Gan Power Devices

  Arizona Board Of Regents On Behalf Of Arizona State University

  0 cites