Patents/Inventors

Hosadurga Shobha

Niskayuna, NYUS26 patents

23 Patents

US125989832026
Interconnects Formed Using Integrated Damascene and Subtractive Etch Processing
International Business Machines Corporation
0 cites
US125882612026
Selective Deposition on Metals Using Porous Low-k Materials
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125754002026
Power Planes and Pass-through Vias
International Business Machines Corporation
0 cites
US125507132026
Hybrid Buried Power Rail Structure with Dual Front Side and Backside Processing
International Business Machines Corporation
0 cites
US125385532026
Contact Structure for Power Delivery on Semiconductor Device
International Business Machines Corporation
0 cites
US124944082025
Double Patterned Microcooler Having Alternating Fin Widths
International Business Machines Corporation
0 cites
US124245492025
Skip-level TSV with Hybrid Dielectric Scheme for Backside Power Delivery
International Business Machines Corporation
0 cites
US124245572025
Dual Structured Buried Rail
International Business Machines Corporation
0 cites
US124179262025
Circuit Interconnect Structure
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124179632025
Isolation Rail Between Backside Power Rails
International Business Machines Corporation
0 cites
US124128362025
Backside Power Plane
International Business Machines Corporation
0 cites
US123343982025
Multilayer Dielectric Stack for Damascene Top-via Integration
International Business Machines Corporation
0 cites
US123344422025
Dielectric Caps for Power and Signal Line Routing
International Business Machines Corporation
0 cites
US122666072025
Bottom Barrier Free Interconnects Without Voids
International Business Machines Corporation
0 cites
US122610562025
Top via Patterning Using Metal as Hard Mask and via Conductor
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122180032025
Selective ILD Deposition for Fully Aligned via with Airgap
Adeia Semiconductor Solutions LLC
0 cites
US121486992024
High Aspect Ratio Buried Power Rail Metallization
International Business Machines Corporation
0 cites
US118044052023
Method of Forming Copper Interconnect Structure with Manganese Barrier Layer
Tessera LLC
0 cites
US117567862023
Forming High Carbon Content Flowable Dielectric Film with Low Processing Damage
International Business Machines Corporation
0 cites
US117568872023
Backside Floating Metal for Increased Capacitance
International Business Machines Corporation
0 cites
US116768542023
Selective ILD Deposition for Fully Aligned via with Airgap
Tessera LLC
0 cites
US116211892023
Barrier-less Prefilled via Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115691342023
Wafer Backside Engineering for Wafer Stress Control
International Business Machines Corporation
0 cites