Patents/Inventors

Hongxia Feng

Chandler, AZUS14 patents

13 Patents

US126160522026
Methods and Apparatus to Reduce Defects in Interconnects Between Semicondcutor Dies and Package Substrates
Intel Corporation
0 cites
US125688312026
Patternable Die Attach Materials and Processes for Patterning
Intel Corporation
0 cites
US125576282026
Organic Film Stress Buffer for Interface of Metal and Dielectric
Intel Corporation
0 cites
US123548832025
Omni Directional Interconnect with Magnetic Fillers in Mold Matrix
Intel Corporation
0 cites
US123411172025
Methods and Apparatus to Reduce Defects in Interconnects Between Semiconductor Dies and Package Substrates
Intel Corporation
0 cites
US122551302025
Airgap Structures for High Speed Signal Integrity
Intel Corporation
0 cites
US122305632025
Method to Enable 30 Microns Pitch EMIB or Below
Intel Corporation
0 cites
US120339302024
Selectively Roughened Copper Architectures for Low Insertion Loss Conductive Features
Intel Corporation
0 cites
US119554482024
Architecture to Manage FLI Bump Height Delta and Reliability Needs for Mixed EMIB Pitches
Intel Corporation
0 cites
US119488982024
Etch Barrier for Microelectronic Packaging Conductive Structures
Intel Corporation
0 cites
US119233122024
Patternable Die Attach Materials and Processes for Patterning
Intel Corporation
0 cites
US116768912023
Method to Enable 30 Microns Pitch EMIB or Below
Intel Corporation
0 cites
US116409342023
Lithographically Defined Vertical Interconnect Access (VIA) in Dielectric Pockets in a Package Substrate
Intel Corporation
0 cites