Hongji Qi

7 Patents

• US123786902025

  Method for Growing Long-seed DKDP Crystal by Two-dimensional Motion

  Chongqing University

  0 cites
• US120571992024

  Preparation Method of Conductive Gallium Oxide Based on Deep Learning and Vertical Bridgman Growth Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites
• US120312302024

  Quality Prediction Method, Preparation Method and System of High Resistance Gallium Oxide Based on Deep Learning and Czochralski Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites
• US120247902024

  Quality Prediction Method, Preparation Method and System of Conductive Gallium Oxide Based on Deep Learning and Czochralski Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites
• US120247912024

  Quality Prediction Method, Preparation Method and System of High Resistance Gallium Oxide Based on Deep Learning and Edge-defined Film-fed Growth Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites
• US120266162024

  Preparation Method of High Resistance Gallium Oxide Based on Deep Learning and Vertical Bridgman Growth Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites
• US120272392024

  Quality Prediction Method, Preparation Method and System of Conductive Gallium Oxide Based on Deep Learning and Edge-defined Film-fed Growth Method

  HANGZHOU FUJIA GALLIUM TECHNOLOGY Co. Ltd.

  0 cites