Hongfa Luan

2 Patents

• US121835812024

  Method of Forming a Semiconductor Device by Driving Hydrogen Into a Dielectric Layer from Another Dielectric Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117768142023

  Method of Forming Semiconductor Device by Driving Hydrogen Into a Dielectric Layer from Another Dielectric Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites