Patents/Inventors

Hongbin Zhu

WuhanCN35 patents

29 Patents

US126219872026
Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US126157602026
Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US124083392025
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US124069542025
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US124083382025
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US123947512025
Method of Forming Semiconductor Structure
Yangtze Memory Technologies Co., Ltd.
0 cites
US123493412025
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US122794202025
Memory Having a Continuous Channel
Micron Technology, Inc.
0 cites
US122323162025
Bonded Memory Device and Fabrication Methods Thereof
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121763102024
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121702582024
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US121441772024
Methods for Forming Channel Structures with Protective Structure in Three-dimensional Memory Devices
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US120806652024
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US120741052024
Self-aligned Contacts in Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US120528632024
Memory Circuitry Comprising a Vertical String of Memory Cells and a Conductive via and Method Used in Forming a Vertical String of Memory Cells and a Conductive Via
Micron Technology, Inc.
0 cites
US120339672024
Memory Devices Having Vertical Transistors and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US120151352024
Lithium Ion Batteries and Battery Modules
Jiangsu Electric Power Research Institute Co., Ltd.
0 cites
US119490222024
Three Dimensional Memory
Micron Technology, Inc.
0 cites
USD10096642024
Body Fat Scale
SHENZHEN YOLANDA TECHNOLOGY CO., Ltd.
0 cites
US118056472023
Three-dimensional Memory Device Having Epitaxially-grown Semiconductor Channel and Method for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US117929792023
Three-dimensional Memory Device Having Multi-deck Structure and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
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US116902192023
Three-dimensional Memory Devices Having Through Array Contacts and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116643092023
Self-aligned Contacts in Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116476292023
Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US116264242023
Semiconductor Devices and Methods of Fabrication
Micron Technology, Inc.
0 cites
US115813222023
Three-dimensional Memory Devices Having Through Array Contacts and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US115813282023
Three-dimensional Memory Device Having Epitaxially Grown Single Crystalline Silicon Channel
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US115520122023
Self-aligned Contacts in Three-dimensional Memory Devices and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites
US115455012023
Three-dimensional Memory Device Having Multi-deck Structure and Methods for Forming the Same
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites