Ho-yung Hwang

5 Patents

• US123277642025

  Two-dimension Self-aligned Scheme with Subtractive Metal Etch

  APPLIED MATERIALS, Inc.

  0 cites
• US122725642025

  Tin Oxide and Tin Carbide Materials for Semiconductor Patterning Applications

  Applied Materials, Inc.

  0 cites
• US120209082024

  Atomic Layer Etching of Ru Metal

  Applied Materials, Inc.

  0 cites
• US119948002024

  Dose Reduction of Patterned Metal Oxide Photoresists

  Applied Materials, Inc.

  0 cites
• US115502222023

  Dose Reduction of Patterned Metal Oxide Photoresists

  Applied Materials, Inc.

  0 cites