Ho-in Ryu

3 Patents

• US117788102023

  Semiconductor Device

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117709252023

  Semiconductor Device with Trench Structure to Reduce Parasitic Capacitance and Leakage Current

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117284102023

  Semiconductor Device

  Samsung Electronics Co., Ltd.

  0 cites