19 Patents
- 0 cites
- US125385352026Semiconductor Device Having Semiconductor Regions of Alternating Conductivity Types, One of Which Has a Peak in Impurity Concentration Located Between Gate Electrodes of the Semiconductor Device
Toshiba Electronic Devices & Storage Corporation
0 cites - US125324912026Semiconductor Device Having First and Second Regions Extending in Different Directions in Termination Region and Manufacturing Method Thereof
Toshiba Electronic Devices & Storage Corporation
0 cites - US123826482025Semiconductor Device and Semiconductor Circuit
Toshiba Electronic Devices & Storage Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- US123006952025Semiconductor Device and Semiconductor Circuit
Toshiba Electronic Devices & Storage Corporation
0 cites - 0 cites
- 0 cites
- US120878502024Semiconductor Device and Semiconductor Circuit
Toshiba Electronic Devices & Storage Corporation
0 cites - 0 cites
- US119844952024Semiconductor Device and Semiconductor Circuit
Toshiba Electronic Devices & Storage Corporation
0 cites - US119089252024Semiconductor Device and Method for Controlling Semiconductor Device
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites - 0 cites
- 0 cites
- 0 cites
- US115750312023Semiconductor Element and Semiconductor Device
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites - US115631132023Semiconductor Device and Integrated Circuit
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
0 cites