Patents/Inventors

Hiroki Noguchi

HsinchuTW54 patents

45 Patents

US126036622026
Encoder
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125914292026
Memory Interface
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125622162026
Circuit with Swept Voltage on Bit Line or Bit Line Bar
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124825312025
Dynamic Error Monitor and Repair
Taiwan Semiconductor Manufacturing Company, Ltd
0 cites
US124126202025
Second Word Line Combined with Y-mux Signal in High Voltage Memory Program
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123809502025
Non-volatile Static Random Access Memory (NVSRAM) with Multiple Magnetic Tunnel Junction Cells
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123744192025
Method and System for Replacement of Memory Cells
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123568682025
Magnetic Device and Magnetic Random Access Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123224322025
Method and System for Refresh of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US123175132025
Semiconductor Device and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122885772025
Sensing Amplifier, Method and Controller for Sensing Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122611522025
Vertical Interconnect Structures in Three-dimensional Integrated Circuits
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122549232025
Nonvolatile SRAM
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122290032025
Memory Error Detection and Correction
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122257342025
Semiconductor MRAM Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121657042024
Memory Device with Write Pulse Trimming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121522322024
Lactobacillus Paracasei Strain
OTSUKA PHARMACEUTICAL CO., Ltd.
0 cites
US121255512024
Structure for Multiple Sense Amplifiers of Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121121632024
Memory Interface
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120682842024
Vertical Interconnect Structures with Integrated Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120463172024
Method and System for Replacement of Memory Cells
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120418552024
Magnetic Device and Magnetic Random Access Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120264042024
Memory Device for Scheduling Maximum Number of Memory Macros Write Operations at Re-arranged Time Intervals
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120272202024
One-time-programmable Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120226652024
Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119841642024
Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119787232024
Vertical Interconnect Structures in Three-dimensional Integrated Circuits
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119623322024
Encoder
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119356102024
Dynamic Error Monitor and Repair
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118546172023
Structure for Multiple Sense Amplifiers of Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118546562023
Memory Refresh
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118106112023
Method and System for Refresh of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117789242023
Magnetic Device and Magnetic Random Access Memory
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117627322023
Memory Error Detection and Correction
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117638752023
Second Word Line Combined with Y-MUX Signal in High Voltage Memory Program
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117420212023
Memory Device with Write Pulse Trimming
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites
US117232182023
Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116814682023
Memory Device for Scheduling Maximum Number of Memory Macros Write Operations at Re-arranged Time Intervals
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116824682023
Method and System for Replacement of Memory Cells
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116578732023
Non-volatile Static Random Access Memory (nvsram) with Multiple Magnetic Tunnel Junction Cells
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116314402023
Sensing Amplifier, Method and Controller for Sensing Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116054272023
Memory Device with Write Pulse Trimming
Taiwan Semiconductor Manufacturing Company Ltd.
0 cites
US115746762023
Structure for Multiple Sense Amplifiers of Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US115753872023
Symmetry Unary Code Encoder
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115452182023
Nonvolatile SRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites