6 Patents
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- US124009632025Conductive Superlattice Structures and Methods of Forming the Same
TOKYO ELECTRON LIMITED
0 cites - US122886922025Method of Forming a FET Structure by Selective Deposition of Film on Source/drain Contact
TOKYO ELECTRON LIMITED
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- US122372162025Method for Filling Recessed Features in Semiconductor Devices with a Low-resistivity Metal
Tokyo Electron Limited
0 cites - US115629062023Low Resistance Source Drain Contact Formation with Trench Metastable Alloys and Laser Annealing
GLOBALFOUNDRIES Inc.
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