Hideo Fujisawa

5 Patents

• US121071292024

  Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device

  Mitsubishi Chemical Corporation

  0 cites
• US118107822023

  Conductive C-plane Gan Substrate

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US116706872023

  Gallium Nitride Substrate and Manufacturing Method of Nitride Semiconductor Crystal

  MITSUBISHI CHEMICAL CORPORATION

  0 cites
• US116644282023

  Self-standing Gan Substrate, Gan Crystal, Method for Producing Gan Single Crystal, and Method for Producing Semiconductor Device

  Mitsubishi Chemical Corporation

  0 cites
• US115917152023

  Gan Single Crystal and Method for Manufacturing Gan Single Crystal

  MITSUBISHI CHEMICAL CORPORATION

  0 cites