Hidekazu Tsuchida

9 Patents

• US122975622025

  Silicon Carbide Ingot Including Screw Dislocations

  3)TOYOTA JIDOSHA KABUSHIKI KAISHA

  0 cites
• US122814102025

  Method and Apparatus for Manufacturing Silicon Carbide Single Crystal, and Silicon Carbide Single Crystal Ingot

  DENSO CORPORATION

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• US122528082025

  Silicon Carbide Single Crystal Wafer, and Methods for Manufacturing Silicon Carbide Single Crystal Ingot and the Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

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• US122496252025

  Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device

  MITSUBISHI ELECTRIC CORPORATION

  0 cites
• US120717092024

  Methods for Manufacturing Silicon Carbide Single Crystal Ingot and Silicon Carbide Single Crystal Wafer

  DENSO CORPORATION

  0 cites
• US119489762024

  Vertical MOSFET Having Trench Gate Structure Containing Silicon Carbide

  FUJI ELECTRIC CO., Ltd.

  0 cites
• US119065692024

  Semiconductor Wafer Evaluation Apparatus and Semiconductor Wafer Manufacturing Method

  SHOWA DENKO K.K.

  0 cites
• US118460402023

  Silicon Carbide Single Crystal

  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

  0 cites
• US116005382023

  Sic Epitaxial Wafer and Method for Producing Sic Epitaxial Wafer

  SHOWA DENKO K.K.

  0 cites