10 Patents
- US125637752026Transistor Devices Having Buried Interconnection Line Below Source/drain Regions and One or More Protective Layers Covering Lower Surfaces of Gate Structures
SAMSUNG ELECTRONICS CO., Ltd.
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- US123826812025Multi-bridge Channel Field Effect Transistor with Reduced Gate-channel Leakage Current
SAMSUNG ELECTRONICS CO., Ltd.
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- US120149572024Semiconductor Device Having a Source/drain Contact Plug with an Upwardly Protruding Portion
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119787752024Method of Fabricating Semiconductor Devices Including a Fin Field Effect Transistor
Samsung Electronics Co., Ltd.
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- US117054542023Active Regions via Contacts Having Various Shaped Segments Off-set from Gate via Contact
Samsung Electronics Co, Ltd.
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