Patents/Inventors

Heng Wu

Santa Clara, CAUS93 patents

77 Patents

US126204262026
Deterministic Voltage-controlled Magnetic Anisotropy (VCMA) MRAM with Spin-transfer Torque (STT) MRAM Assistance
International Business Machines Corporation
0 cites
US126105132026
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
International Business Machines Corporation
0 cites
US126106132026
Nanosheet Device with Vertical Blocker Fin
International Business Machines Corporation
0 cites
US126045102026
Contact Jumper for Non-self Aligned Contact Devices
International Business Machines Corporation
0 cites
US125909762026
Detection Method Using Both Fluorescence and Chemiluminescence Labels
ACCESS MEDICAL SYSTEMS, Ltd.
0 cites
US125751132026
High Density Memory with Stacked Nanosheet Transistors
International Business Machines Corporation
0 cites
US125686832026
Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites
US125637472026
Three Dimensional Reram Device
International Business Machines Corporation
0 cites
US125639722026
Magnetic Tunnel Junction Pillar Formation for MRAM Device
International Business Machines Corporation
0 cites
US125572952026
Embedded Reram with Backside Contact
International Business Machines Corporation
0 cites
US125573542026
Vertical Field-effect Transistor (FET) Stacked Over Horizontal FET
International Business Machines Corporation
0 cites
US125433582026
Transition Metal Dichalcogenide (TMD) Transistor Structure
International Business Machines Corporation
0 cites
US125074372025
Direct Backside Self-aligned Contact
International Business Machines Corporation
0 cites
US124842652025
Subtractive Source Drain Contact for Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124714972025
Magnetic Tunnel Junction Device with Magnetoelectric Assist
International Business Machines Corporation
0 cites
US124713642025
Hybrid Stacked Field Effect Transistors
International Business Machines Corporation
0 cites
US124444472025
Digital Phase Change Memory (PCM) Array for Analog Computing
International Business Machines Corporation
0 cites
US124330202025
Multi-vt Solution for Replacement Metal Gate Bonded Stacked FET
International Business Machines Corporation
0 cites
US124166272025
Immunoassay with Enhanced Sensitivity
ACCESS MEDICAL SYSTEMS, Ltd.
0 cites
US124024082025
Stacked FETS Including Devices with Thick Gate Oxide
International Business Machines Corporation
0 cites
US123896092025
Circuit Architecture Using Transistors with Dynamic Dual Functionality for Logic and Embedded Memory Drivers
International Business Machines Corporation
0 cites
US123826822025
Gate-all-around Nanosheet-fet with Variable Channel Geometries for Performance Optimization
International Business Machines Corporation
0 cites
US123693792025
Nanosheet Transistor
Adeia Semiconductor Solutions LLC
0 cites
US123566852025
Looped Long Channel Field-effect Transistor
International Business Machines Corporation
0 cites
US123494572025
Stacked Transistors Having Bottom Contact with Replacement Spacer
International Business Machines Corporation
0 cites
US123494452025
Vertically Integrated Semiconductor Device
International Business Machines Corporation
0 cites
US123226522025
Local Interconnect for Cross Coupling
International Business Machines Corporation
0 cites
US123212632025
Sensor Based Memory Array Data Scrubbing
Internaional Business Machines Corporation
0 cites
US123100902025
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US122832982025
Magnetoresistive Random Access Memory with Data Scrubbing
International Business Machines Corporation
0 cites
US122740892025
Stacked FET Sidewall Strap Connections Between Gates
International Business Machines Corporation
0 cites
US122680162025
Buried Power Rail Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US121781372024
In-array Magnetic Shield for Spin-transfer Torque Magneto-resistive Random Access Memory
International Business Machines Corporation
0 cites
US121764162024
Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites
US121764342024
Strained Semiconductor FET Devices with Epitaxial Quality Improvement
International Business Machines Corporation
0 cites
US121538212024
Analog Persistent Circuit for Storage Access Monitoring
International Business Machines Corporation
0 cites
US121425262024
Stacked Device with Buried Interconnect
International Business Machines Corporation
0 cites
US121425992024
Stacked Transistor Structure with Reflection Layer
International Business Machines Corporation
0 cites
US121274822024
Multi-state SOT-MRAM Structure
International Business Machines Corporation
0 cites
US121193412024
Electrostatic Discharge Diode Having Dielectric Isolation Layer
International Business Machines Corporation
0 cites
US121086922024
Three Terminal Phase Change Memory with Self-aligned Contacts
International Business Machines Corporation
0 cites
USD10428472024
Hearing Aid
Shenzhen Magnet Technology Co., Ltd.
0 cites
US120877702024
Complementary Field Effect Transistor Devices
International Business Machines Corporation
0 cites
US120162512024
Spin-orbit Torque and Spin-transfer Torque Magnetoresistive Random-access Memory Stack
International Business Machines Corporation
0 cites
US120028742024
Buried Power Rail Contact
International Business Machines Corporation
0 cites
US120028052024
Local Vertical Interconnects for Monolithic Stack Transistors
International Business Machines Corporation
0 cites
US119905302024
Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119489442024
Optimized Contact Resistance for Stacked FET Devices
International Business Machines Corporation
0 cites
USD10207022024
Combined Earphones and Charging Case
0 cites
US119440132024
Magnetic Tunnel Junction Device with Minimum Stray Field
International Business Machines Corporation
0 cites
US119425572024
Nanosheet Transistor with Enhanced Bottom Isolation
International Business Machines Corporation
0 cites
US119234342024
Self-aligned Bottom Spacer Epi Last Flow for VTFET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119089442024
Contact Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites
US119089072024
VFET Contact Formation
International Business Machines Corporation
0 cites
US119014382024
Nanosheet Transistor
Adeia Semiconductor Solutions LLC
0 cites
US118944232024
Contact Resistance Reduction in Nanosheet Device Structure
International Business Machines Corporation
0 cites
US118309462023
Bottom Source/drain for Fin Field Effect Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118237242023
Magneto-electric Low Power Analogue Magnetic Tunnel Junction Memory
International Business Machines Corporation
0 cites
US118189712023
PCM Cell with Resistance Drift Correction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117642982023
VTFET with Buried Power Rails
International Business Machines Corporation
0 cites
US117569572023
Reducing Gate Resistance in Stacked Vertical Transport Field Effect Transistors
International Business Machines Corporation
0 cites
US117497442023
Fin Structure for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US117424092023
Replacement-channel Fabrication of III-V Nanosheet Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117423542023
Top Epitaxial Layer and Contact for VTFET
International Business Machines Corporation
0 cites
US117299962023
High Retention Emram Using Vcma-assisted Writing
International Business Machines Corporation
0 cites
US117157942023
VTFET with Cell Height Constraints
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117105212023
Static Random-access Memory Cell Design
International Business Machines Corporation
0 cites
US117055042023
Stacked Nanosheet Transistor with Defect Free Channel
International Business Machines Corporation
0 cites
US116886352023
Oxygen-free Replacement Liner for Improved Transistor Performance
International Business Machines Corporation
0 cites
US116640592023
Low Power Mtj-based Analog Memory Device
International Business Machines Corporation
0 cites
US116385202023
Ophthalmic Imaging System
SVISION IMAGING LIMITED
0 cites
US116211992023
Silicide Formation for Source/drain Contact in a Vertical Transport Field-effect Transistor
International Business Machines Corporation
0 cites
US116159902023
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US116161402023
Vertical Transport Field Effect Transistor with Bottom Source/drain
International Business Machines Corporation
0 cites
US116057172023
Wrapped-around Contact for Vertical Field Effect Transistor Top Source-drain
International Business Machines Corporation
0 cites
US115631732023
PCM Cell with Resistance Drift Correction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115576512023
Nanosheet Transistors with Inner Airgaps
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites