13 Patents
- US124713112025Semiconductor Fin-like Field-effect Transistor (finfet) Device Including Source/drain Structure with Boron Doped Capping Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US123362102025Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122182402025Source/drain Regions of Finfet Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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- US120574502024Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120028542024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US117356642023Source/drain Regions of FINFET Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117356682023Interfacial Layer Between Fin and Source/drain Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116521052023Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115750262023Source/drain Structure for Semiconductor Device
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites