Patents/Inventors

Hemanth Jagannathan

Niskayuna, NYUS19 patents

19 Patents

US125504202026
Top Contact Structures for Stacked Transistors
International Business Machines Corporation
0 cites
US125504212026
VTFET with Reduced Parasitic Capacitance
International Business Machines Corporation
0 cites
US125385652026
Self-aligned Bottom Spacer
International Business Machines Corporation
0 cites
US124648092025
Vertical Field Effect Transistor with Minimal Contact to Gate Erosion
International Business Machines Corporation
0 cites
US124396602025
Vertical Transistor with Reduced Cell Height
International Business Machines Corporation
0 cites
US123895822025
High Density Stacked Vertical Transistor Static Random Access Memory Structure
International Business Machines Corporation
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US123566852025
Looped Long Channel Field-effect Transistor
International Business Machines Corporation
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US123567112025
Late Gate Extension
International Business Machines Corporation
0 cites
US123100902025
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US122680302025
Self-aligned C-shaped Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US119731252024
Self-aligned Uniform Bottom Spacers for VTFETS
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119089232024
Low-resistance Top Contact on VTFET
International Business Machines Corporation
0 cites
US118551912023
Vertical FET with Contact to Gate Above Active Fin
International Business Machines Corporation
0 cites
US118429982023
Semiconductor Device and Method of Forming the Semiconductor Device
International Business Machines Corporation
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US117422462023
Local Isolation of Source/drain for Reducing Parasitic Capacitance in Vertical Field Effect Transistors
International Business Machines Corporation
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US117424262023
Forming Crossbar and Non-crossbar Transistors on the Same Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116463732023
Vertical Field Effect Transistor with Bottom Spacer
International Business Machines Corporation
0 cites
US116159902023
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US115750222023
Vertical Field-effect Transistor Late Gate Recess Process with Improved Inter-layer Dielectric Protection
International Business Machines Corporation
0 cites