10 Patents
- US125324662026Semiconductor Device Having Source Leading-out Contacts and Source Layer, Memory Device, and Memory System
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US124656482025Heterobifunctional Compounds as Degraders of HPK1
Icahn School Of Medicine At Mount Sinai
0 cites - US121967992025Method and Apparatus for Optimizing and Testing Harness Layout of Battery Swapping Electrical Interface
CATARC NEW ENERGY VEHICLE TEST CENTER (TIANJIN) CO., Ltd.
0 cites - US121365992024Three-dimensional Memory Devices and Fabricating Methods Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US120670792024Farmland Reference Crop Evapotranspiration Prediction Method Considering Uncertainty of Meteorological Factors
CHINA INSTITUTE OF WATER RESOURCES AND HYDROPOWER RESEARCH
0 cites - US120339662024Contact Pads of Three-dimensional Memory Device and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US119569582024Method for Fabricating Three-dimensional Semiconductor Device Using Buried Stop Layer in Substrate
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites - US118297152023Text-based News Significance Evaluation Method, Apparatus, and Electronic Device
Business Management Advisory LLC
0 cites - US117283032023Three-dimensional NAND Memory Device and Method of Forming the Same
Yangtze Memory Technologies Co., Ltd.
0 cites - US117107302023Fabricating Method of Semiconductor Device with Exposed Input/output Pad in Recess
Yangtze Memory Technologies Co., Ltd.
0 cites