5 Patents
- US124976942025Method of Forming Low-resistivity Ru ALD Through a Bi-layer Process and Related Structures
Samsung Electronics Co., Ltd.
0 cites - US124566472025Nanosheet Transistor Devices and Related Fabrication Methods
Samsung Electronics Co., Ltd.
0 cites - US123566652025Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119786682024Integrated Circuit Devices Including a via and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US117053632023Fully Aligned via Integration with Selective Catalyzed Vapor Phase Grown Materials
Samsung Electronics Co., Ltd
0 cites