7 Patents
- US124263422025Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
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- US117642752023Indium-containing Fin of a Transistor Device with an Indium-rich Core
Intel Corporation
0 cites - US115814062023Method of Fabricating CMOS Finfets by Selectively Etching a Strained Sige Layer
Daedalus Prime LLC
0 cites - US115576582023Transistors with High Density Channel Semiconductor Over Dielectric Material
Intel Corporation
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