12 Patents
- US125139842025Double-sided Integrated Circuit Transistor Structures with Depopulated Bottom Channel Regions
Intel Corporation
0 cites - US124396692025Co-deposition of Titanium and Silicon for Improved Silicon Germanium Source and Drain Contacts
Intel Corporation
0 cites - US122888072025Amorphization and Regrowth of Source-drain Regions from the Bottom-side of a Semiconductor Assembly
Intel Corporation
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- US120683192024High Performance Semiconductor Oxide Material Channel Regions for NMOS
Intel Corporation
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- US117989912023Amorphization and Regrowth of Source-drain Regions from the Bottom-side of a Semiconductor Assembly
Intel Corporation
0 cites - US117569982023Source-channel Junction for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
0 cites - US116950812023Channel Layer Formation for III-V Metal-oxide-semiconductor Field Effect Transistors (mosfets)
Intel Corporation
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