Hariprasad Sreedharamurthy

7 Patents

• US124354402025

  Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant

  Globalwafers Co., Ltd.

  0 cites
• US121958722025

  Ingot Puller Apparatus That Use a Solid-phase Dopant

  Globalwafers Co., Ltd.

  0 cites
• US119763792024

  Crystal Pulling Systems Having Fluid-filled Exhaust Tubes That Extend Through the Housing

  Globalwafers Co., Ltd.

  0 cites
• US119423602024

  Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability

  Globalwafers Co., Ltd.

  0 cites
• US118878852024

  Radio Frequency Silicon on Insulator Wafer Platform with Superior Performance, Stability, and Manufacturability

  Globalwafers Co., Ltd.

  0 cites
• US116263182023

  Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability

  Globalwafers Co., Ltd.

  0 cites
• US115850102023

  Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant and Ingot Puller Apparatus That Use a Solid-phase Dopant

  Globalwafers Co., Ltd.

  0 cites