3 Patents
- US124712782025Three-dimensional Memory Device with Charge Trap Layer Including Carbon Region and Fabrication Method Thereof
Yangtze Memory Technologies Co., Ltd.
0 cites - US123174912025Three-dimensional Memory Device and Fabrication Method for Enhanced Reliability
Yangtze Memory Technologies Co., Ltd.
0 cites - US120528682024Ladder Annealing Process for Increasing Polysilicon Grain Size in Semiconductor Device
YANGTZE MEMORY TECHNOLOGIES CO., Ltd.
0 cites