51 Patents
- US126157932026Power Semiconductor Device, Method of Producing a Power Semiconductor Device and Method of Operating a Power Semiconductor Device
Infineon Technologies AG
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- US125506452026Method of Forming a Semiconductor Device Including an Absorption Layer
Infineon Technologies AG
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- US125000862025Method of Manufacturing a Metal Silicide Layer Above a Silicon Carbide Substrate, and Semiconductor Device Comprising a Metal Silicide Layer
INFINEON TECHNOLOGIES AG
0 cites - US124713242025Power Semiconductor Device Having an Electrode with an Embedded Material
Infineon Technologies Austria AG
0 cites - US124630372025Method of Manufacturing Ohmic Contacts on a Silicon Carbide (SIC) Substrate, Method of Manufacturing a Semiconductor Device, and Semiconductor Device
INFINEON TECHNOLOGIES AG
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- US124127402025Semiconductor Device with a Porous Portion, Wafer Composite and Method of Manufacturing a Semiconductor Device
Infineon Technologies AG
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- US122727382025Methods of Forming Semiconductor Devices in a Layer of Epitaxial Silicon Carbide
Infineon Technologies AG
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- US122117032025Methods for Forming a Semiconductor Device Having a Second Semiconductor Layer on a First Semiconductor Layer
Infineon Technologies AG
0 cites - US121366232024Multi-device Semiconductor Chip with Electrical Access to Devices at Either Side
Infineon Technologies Austria AG
0 cites - US121071302024Semiconductor Device Having Semiconductor Device Elements in a Semiconductor Layer
Infineon Technologies AG
0 cites - US121071412024Semiconductor Device Having a Silicon Carbide Drift Zone Over a Silicon Carbide Field Stop Zone
Infineon Technologies AG
0 cites - US121071282024Method of Producing a Semiconductor Device Having a Ferroelectric Gate Stack
Infineon Technologies AG
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- US120275912024Method for Forming a Semiconductor Device and a Semiconductor Device
Infineon Technologies AG
0 cites - US119490062024Power Semiconductor Device with P-contact and Doped Insulation Blocks Defining Contact Holes
Infineon Technologies Dresden GmbH & Co. KG
0 cites - US119293972024Semiconductor Device Including Trench Structure and Manufacturing Method
Infineon Technologies AG
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- US118878942024Methods for Processing a Wide Band Gap Semiconductor Wafer Using a Support Layer and Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers Using Support Layers
Infineon Technologies AG
0 cites - US118814062024Method of Manufacturing a Semiconductor Device and Semiconductor Wafer
Infineon Technologies AG
0 cites - US118813972024Semiconductor Device with a Porous Portion, Wafer Composite and Method of Manufacturing a Semiconductor Device
Infineon Technologies AG
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- US118430452023Power Semiconductor Device Having Overvoltage Protection and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites - US118375282023Method of Manufacturing a Semiconductor Device Having a Bond Wire or Clip Bonded to a Bonding Pad
Infineon Technologies AG
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- US117640632023Silicon Carbide Device with Compensation Region and Method of Manufacturing
Infineon Technologies AG
0 cites - US117423842023Vertical Power Semiconductor Device Including a Field Stop Region Having a Plurality of Impurity Peaks
Infineon Technologies AG
0 cites - US117423912023Semiconductor Component Having a Diode Structure in a Sic Semiconductor Body
Infineon Technologies AG
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- US117284272023Power Semiconductor Device Having a Strain-inducing Material Embedded in an Electrode
Infineon Technologies Austria AG
0 cites - US117215472023Method for Manufacturing a Silicon Carbide Substrate for an Electrical Silicon Carbide Device, a Silicon Carbide Substrate and an Electrical Silicon Carbide Device
Infineon Technologies AG
0 cites - US116887132023Additive Manufacturing of a Frontside or Backside Interconnect of a Semiconductor Die
Infineon Technologies Austria AG
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- US116264772023Silicon Carbide Field-effect Transistor Including Shielding Areas
Infineon Technologies AG
0 cites - US115762592023Carrier, Laminate and Method of Manufacturing Semiconductor Devices
Infineon Technologies AG
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- US115521722023Silicon Carbide Device with Compensation Layer and Method of Manufacturing
Infineon Technologies AG
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