10 Patents
- US126220122026Normally-off P -gan Gate Double Channel HEMT and the Manufacturing Method Thereof
The Hong Kong University Of Science And Technology
0 cites - US121990002025Semiconductor Device Structures and Methods of Manufacturing the Same
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - 0 cites
- US120466472024Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120403942024Semiconductor Device Having Improved Gate Leakage Current
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119729962024Semiconductor Device Structures and Methods of Manufacturing the Same
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117698262023Semiconductor Device with Asymmetric Gate Structure
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US116998992023Electronic Device and Electrostatic Discharge Protection Circuit
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US116007082023Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US115630972023High Electron Mobility Transistor and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites