6 Patents
- US126010842026Premelter for Preliminarily Melting Silicon to Be Supplied to Main Crucible and Control Method Thereof
HANWHA CORPORATION
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- US125851092026High-temperature Endoscope Preventing Impurities of Ingot Growth Apparatus from Being Deposited
Hanwha Solutions Corporation
0 cites - US125598572026Method for Controlling Supply of Solid Silicon to Preliminary Crucible of Ingot Growth Apparatus
Hanwha Solutions Corporation
0 cites - 0 cites
- US124924862025Ingot Growing Apparatus Comprising Heater and Method for Manufacturing Heater for Ingot Growing Apparatus
Hanwha Corporation
0 cites