127 Patents
- US126044992026Semiconductor Devices with Embedded Ferroelectric Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US125637362026Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125637902026Sidewall Spacer Structure to Increase Switching Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125572932026Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US125139092025Semiconductor Structure Having Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125060712025Semiconductor Memory Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125016222025Three-dimensional Memory Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124777442025Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124712992025Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US124647262025Three-dimensional Memory Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US124577532025Back-end-of-line Selector for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
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- US124083472025Method for Forming a 3-D Semiconductor Memory Structure Comprising Horizontal and Vertical Conductive Lines
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123961752025Three-dimensional Stackable Ferroelectric Random Access Memory Devices and Methods of Forming
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123961772025Memory Device, Semiconductor Device and Manufacturing Method of the Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123763112025Three-dimensional Memory Device with Word Lines Extending Through Sub-arrays, Semiconductor Device Including the Same and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123638942025Method for Fabricating Three-dimensional Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123550262025Method of Writing to or Erasing Multi-bit Memory Storage Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123496002025Magnetic Tunnel Junction (MTJ) Element and Its Fabrication Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US123100282025Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123100292025Semiconductor Memory Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US123025642025Memory Device Comprising Second Memory Cell Having First Terminal Coupled to First Signal Line Through First Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US1229399920253D Semiconductor Package Including Memory Array
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122848102025Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122740772025Method of Forming Semiconductor Memory Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122680072025Memory Device Including Etch Stop Pattern and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122508222025Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122508292025Memory Device, and Integrated Circuit Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122454352025Grid Structure to Reduce Domain Size in Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122389262025Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US122197752025Semiconductor Structure and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US121913892025Layered Structure, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US121932422025Multi-level Magnetic Tunnel Junction nor Device with Wrap-around Gate Electrodes and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US121676082024Methods of Forming Three-dimensional Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US121503112024Embedded Ferroelectric Finfet Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121208852024Ferroelectric Tunnel Junction Memory Device Using a Magnesium Oxide Tunneling Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121019392024Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120894182024Magnetoresistive Stack with Seed Region and Method of Manufacturing the Same
Everspin Technologies, Inc.
0 cites - 0 cites
- US120698682024Gated Ferroelectric Memory Cells for Memory Cell Array and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120699612024Magnetic Tunnel Junction (MTJ) Element and Its Fabrication Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US120637872024Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd
0 cites - US120574712024Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US120588692024Semiconductor Structure with a Logic Device and a Memory Device Being Formed in Different Levels, and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US120417812024Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120417832024Ferroelectric Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120417862024Ferroelectric Random Access Memory Device with a Three-dimensional Ferroelectric Capacitor
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120274122024Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120226592024Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119978552024Back-end-of-line Selector for Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119918862024Three-dimensional Stackable Ferroelectric Random Access Memory Devices and Methods of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US1199188820243D Stackable Memory and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US119858302024Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119800362024Semiconductor Structure Having Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119633632024Memory Device and Method for Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119555492024Layered Structure, Semiconductor Device Including the Same, and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119504282024Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119439332024Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
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- US119178322024Ferroelectric Tunnel Junction Devices with Metal-fe Interface Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US119106152024Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119106162024Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119106172024Ferroelectric Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119031892024Three-dimensional Memory and Fabricating Method Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119032162024Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US118643922024Multi-level Magnetic Tunnel Junction NOR Device with Wrap-around Gate Electrodes and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118643932024Memory Device, Integrated Circuit Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118567802023Grid Structure to Reduce Domain Size in Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118483812023Methods of Operating Multi-bit Memory Storage Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118495872023Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118495892023Semiconductor Structure and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US118376612023Sidewall Spacer Structure to Increase Switching Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118324502023Embedded Ferroelectric Finfet Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US118056572023Ferroelectric Tunnel Junction Memory Device Using a Magnesium Oxide Tunneling Dielectric and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117990302023Semiconductor Devices with Embedded Ferroelectric Field Effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US117569872023Ferroelectric Tunnel Junction Devices with Discontinuous Seed Structure and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117587372023Ferroelectric Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117440802023Three-dimensional Memory Device with Word Lines Extending Through Sub-arrays, Semiconductor Device Including the Same and Method for Manufacturing the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US1172999720233D Stackable Memory and Methods of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117232092023Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117168572023Semiconductor Memory Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US117169092023Magnetic Tunnel Junction (MTJ) Element and Its Fabrication Process
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US116902292023Magnetoresistive Stack with Seed Region and Method of Manufacturing the Same
EVERSPIN TECHNOLOGIES, Inc.
0 cites - US116784922023Memory Device, Semiconductor Device and Manufacturing Method of the Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116721262023Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116476342023Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116316982023Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116160802023Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US115878232023Three-dimensional Memory Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US115813352023Ferroelectric Tunnel Junction Devices with Metal-fe Interface Layer and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US115813362023Semiconductor Memory Structure and Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115813372023Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115813682023Memory Device, Integrated Circuit Device and Method
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US115692502023Ferroelectric Memory Device Using Back-end-of-line (BEOL) Thin Film Access Transistors and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - 0 cites
- US115630062023Semiconductor Structure and Method for Manufacturing Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115521032023Three-dimensional Stackable Ferroelectric Random Access Memory Devices and Methods of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115455002023Three-dimensional Memory Device and Method
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites