Patents/Inventors

Hamza Yilmaz

Gilroy, CAUS8 patents

11 Patents

US124647472025
Shielded Trench Devices
IPOWER SEMICONDUCTOR
0 cites
US122625532025
Field Stop IGBT with Grown Injection Region
IPOWER SEMICONDUCTOR
0 cites
US121991532025
High Voltage Edge Termination Structure for Power Semiconductor Devices
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US121549552024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US120878312024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US118240902023
Back Side Dopant Activation in Field Stop IGBT
0 cites
US116409922023
Shielded Gate Trench MOSFET Devices
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US116409932023
Shielded Gate Trench MOSFET Devices
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US116409942023
Shielded Gate Trench MOSFET Devices
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US115946132023
Sawtooh Electric Field Drift Region Structure for Planar and Trench Power Semiconductor Devices
Alpha And Omega Semiconductor, Ltd.
0 cites
US115814322023
Small Pitch Super Junction MOSFET Structure and Method
IPOWER SEMICONDUCTOR
0 cites