10 Patents
- US126107542026Chalcogenide-based Material, and Switching Device and Memory Device That Include the Same
Samsung Electronics Co., Ltd.
0 cites - US125882182026Chalcogenide Material, Switching Device Including the Chalcogenide Material, and Memory Device Including the Switching Device
Samsung Electronics Co., Ltd.
0 cites - US125882192026Metal-doped Switching Device and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US125435122026Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124712922025Phase-change Memory Structure and Phase-change Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122549222025Memory Device Including Switching Material and Phase Change Material
Samsung Electronics Co., Ltd.
0 cites - US121019422024Semiconductor Device Including Chalcogen Compound and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118188992023Semiconductor Device Including Layers with Different Chalcogen Compounds and Semiconductor Apparatus Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites