Patents/Inventors

Haiting Wang

Clifton Park, NYUS31 patents

32 Patents

US124955752025
Multi-channel Replacement Metal Gate Device
GLOBALFOUNDRIES U.S. Inc.
0 cites
USD10893222025
Engine
Discovery Energy, LLC
0 cites
US123896162025
Transistors with Multiple Silicide Layers
Globalfoundries U.S. Inc.
0 cites
US123896272025
Silicon Germanium Fins and Integration Methods
Globalfoundries U.S. Inc.
0 cites
US123494592025
High-voltage Semiconductor Device Structures
Globalfoundries U.S. Inc.
0 cites
US122951612025
Trench Isolation Having Three Portions with Different Materials, and LDMOS FET Including Same
Globalfoundries U.S. Inc.
0 cites
US122727402025
Bipolar Junction Transistors with a Nanosheet Intrinsic Base
Globalfoundries U.S. Inc.
0 cites
US122612152025
Fin on Silicon-on-insulator
Globalfoundaries U.S. Inc.
0 cites
US122059492025
High-voltage Semiconductor Device Structures
Globalfoundries U.S. Inc.
0 cites
US121703152024
Field Effect Transistor with Vertical Nanowire in Channel Region and Bottom Spacer Between the Vertical Nanowire and Gate Dielectric Material
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121599262024
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121071542024
Single Fin Structures
Globalfoundries Inc.
0 cites
US119905352024
Lateral Heterojunction Bipolar Transistor with Emitter And/or Collector Regrown from Substrate and Method
Globalfoundries U.S. Inc.
0 cites
US119676372024
Fin-based Lateral Bipolar Junction Transistor with Reduced Base Resistance and Method
Globalfoundries U.S. Inc.
0 cites
US119088572024
Semiconductor Devices Having Late-formed Isolation Structures
Globalfoundries U.S. Inc.
0 cites
US119088982024
Lateral Bipolar Transistor Structure with Base Layer of Varying Horizontal Width and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US119089172024
Gate Structures
GLOBALFOUNDRIES Inc.
0 cites
US118954262024
Method and Apparatus for Capturing Video, Electronic Device and Computer-readable Storage Medium
BEIJING MICROLIVE VISION TECHNOLOGY CO., Ltd
0 cites
US118880502024
Lateral Bipolar Transistor Structure with Inner and Outer Spacers and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US118430342023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118109692023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118126702023
Memory Device Comprising a Top via Electrode and Methods of Making Such a Memory Device
Globalfoundries U.S. Inc.
0 cites
US117858602023
Top Electrode for a Memory Device and Methods of Making Such a Memory Device
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117773132023
Unit Commitment Method Considering Security Region of Wind Turbine Generator with Frequency Response Control
State Grid Corporation Of China
0 cites
US117217222023
Bipolar Junction Transistors Including a Stress Liner
Globalfoundries U.S. Inc.
0 cites
US117107712023
Non-self-aligned Lateral Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites
US117055082023
Single Fin Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116780242023
Subtitle Information Display Method and Apparatus, and Electronic Device, and Computer Readable Medium
Beijing Bytedance Network Technology Co., Ltd.
0 cites
US116521422023
Lateral Bipolar Junction Transistors Having an Emitter Extension and a Halo Region
Globalfoundries U.S. Inc.
0 cites
US116463612023
Electrical Isolation Structure Using Reverse Dopant Implantation from Source/drain Region in Semiconductor Fin
Globalfoundries U.S. Inc.
0 cites
US115630852023
Transistors with Separately-formed Source and Drain
Globalfoundries U.S. Inc.
0 cites
US115455742023
Single Diffusion Breaks Including Stacked Dielectric Layers
Globalfoundries U.S. Inc.
0 cites