16 Patents
- 0 cites
- US125751222026Fin-based Field Effect Transistor (FET) Source/drain Strain to Enhance Driver Current and Performance
QUALCOMM INCORPORATED
0 cites - US125139552025Transistors Having Different Channel Lengths and Comparable Source/drain Spaces
QUALCOMM INCORPORATED
0 cites - US125060352025Self-aligned Source/drain Contact Structure and Method of Manufacturing the Same
QUALCOMM Incorporated
0 cites - US124633412025Multi-band, Shared-aperture, Circularly Polarized Phased Array Antenna
University Of Electronic Science And Technology Of China
0 cites - 0 cites
- 0 cites
- 0 cites
- US120682382024Back-end-of-line (BEOL) High Resistance (hi-r) Conductor Layer in a Metal Oxide Metal (MOM) Capacitor
QUALCOMM Incorporated
0 cites - 0 cites
- 0 cites
- US119014342024Semiconductor Having a Source/drain Contact with a Single Inner Spacer
QUALCOMM Incorporated
0 cites - US117440592023Fin Field-effect Transistor (finfet) Static Random Access Memory (SRAM) Having Pass-gate Transistors with Offset Gate Contact Regions
QUALCOMM INCORPORATED
0 cites - US116877662023Artificial Neural Networks with Precision Weight for Artificial Intelligence
QUALCOMM INCORPORATED
0 cites - US115454832023Nanosheet (NS) and Fin Field-effect Transistor (finfet) Hybrid Integration
QUALCOMM INCORPORATED
0 cites