51 Patents
- US125987562026Phase Change Material (PCM) Switch Having Low Heater Resistance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125882712026Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125687772026Top Electrode via with Low Contact Resistance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124865662025Physical Vapor Deposition Chamber with Target Surface Morphology Monitor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124329422025MIM Capacitor and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124242562025Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US124084482025Deep Trench Isolation Structure and Methods for Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124085672025Memory Device Structure with Data Storage Element
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123641712025Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123566312025Feram with Laminated Ferroelectric Film and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123493662025Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123343172025Remote Plasma Ultraviolet Enhanced Deposition
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123100362025Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122952672025Semiconductor Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US122611972025Diffusion Barrier Layer in Top Electrode to Increase Break Down Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122455292025Diffusion Barrier Layer in Programmable Metallization Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122390352025Resistive Memory Cell Having a Low Forming Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122323362025Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122324342025Multi-doped Data Storage Structure Configured to Improve Resistive Memory Cell Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122258342025Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121781472024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121609952024Wakeup Free Approach to Improve the Ferroelectricity of Feram Using a Stressor Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121375722024Ferroelectric Memory Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121320662024Capping Structure Along Image Sensor Element to Mitigate Damage to Active Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121274832024Doped Sidewall Spacer/etch Stop Layer for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121020192024Data Storage Structure for Improving Memory Cell Reliability
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120807382024Image Sensor Having Stacked Metal Oxide Films as Fixed Charge Film
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US120756262024Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120756362024Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120699712024Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120355372024Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119919372024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US119676112024Multilayer Structure, Capacitor Structure and Electronic Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US119615452024Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119161272024Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118959332024Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118568012023Threshold Voltage-modulated Memory Device Using Variable-capacitance and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US118442262023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117789312023Diffusion Barrier Layer in Programmable Metallization Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117588302023Memory Device Structure with Protective Element
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117372802023Wakeup Free Approach to Improve the Ferroelectricity of Feram Using a Stressor Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232122023Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117169132023Data Storage Structure for Improving Memory Cell Reliability
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116839992023Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116659092023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116109272023Capping Structure Along Image Sensor Element to Mitigate Damage to Active Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115946782023Diffusion Barrier Layer in Programmable Metallization Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115452022023Circuit Design and Layout with High Embedded Memory Density
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites