3 Patents
- US124713242025Power Semiconductor Device Having an Electrode with an Embedded Material
Infineon Technologies Austria AG
0 cites - US118878942024Methods for Processing a Wide Band Gap Semiconductor Wafer Using a Support Layer and Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers Using Support Layers
Infineon Technologies AG
0 cites - US117284272023Power Semiconductor Device Having a Strain-inducing Material Embedded in an Electrode
Infineon Technologies Austria AG
0 cites