Patents/Inventors

Gyeom Kim

Hwsaseong-siKR35 patents

25 Patents

US126105742026
Semiconductor Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US126045012026
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US125503922026
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125385212026
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125074512025
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US124955902025
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US124462622025
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123826852025
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123289372025
Integrated Circuit Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122888052025
Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122495052025
Semiconductor Device Including Epitaxial Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122373832025
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US121599112024
Semiconductor Including Active Contact Buried Portions
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121131082024
Integrated Circuit Device
Samsung Electronics Co., Ltd.
0 cites
US120949742024
Semiconductor Devices and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US120340432024
Integrated Circuit Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US120275962024
Semiconductor Device with Source/drain Pattern Including Buffer Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119845072024
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US118697652024
Semiconductor Device Including Epitaxial Region
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118211062023
Semiconductor Process Chamber Including Lower Volume Upper Dome
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117914002023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US117356632023
Semiconductor Device and Method for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US116887782023
Semiconductor Device Including Three-dimensional Field-effect Transistor with Curved Multi-layered Source/drain Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US116644532023
Semiconductor Devices and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites
US116264012023
Integrated Circuit Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites