Gweltaz Gaudin

4 Patents

• US126159982026

  Detachable Temporary Substrate Compatible with Very High Temperatures and Process for Transferring a Working Layer from the Substrate

  Soitec

  0 cites
• US125989232026

  Method for Producing a Semiconductor Structure Comprising an Interface Region Including Agglomerates

  SOITEC

  0 cites
• US122341442025

  Method for Sealing Cavities Using Membranes

  SOITEC

  0 cites
• US120876312024

  Method for Producing a Composite Structure Comprising a Thin Monocristalline Layer on a Carrier Substrate

  SOITEC

  0 cites