Gwan Hyeob Koh

2 Patents

• US125384962026

  Nonvolatile Memory Devices Having Magnetic Tunnel Junction Memory Cells Therein

  Samsung Electronics Co., Ltd.

  0 cites
• US120809412024

  Signal Transferring Device and Multiplexer Using Magnetic Thin Film Structures

  Seoul National University R&DB Foundation

  0 cites