10 Patents
- US125884232026Magnetoresistive Device, Method for Changing Resistance State Thereof, and Synapse Learning Module
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US124779602025Memristor, Method of Calculating Hamming Distance, and In-memory Computing Integration Application
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US124532922025All-electrically-controlled Spintronic Neuron Device, Neuron Circuit and Neural Network
Institute Of Microelectronics, Chinese Academy Of Sciences
0 cites - US124311752025Self-reference Storage Structure and In-memory Computing Circuit
INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
0 cites - US123877742025Spintronic Device, Memory Cell, Memory Array and Read and Write Circuit
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US123361882025Two-dimensional Material-based Selector with Stack Unit, Memory Unit, Array, and Method of Operating the Same
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US122937812025Three-state Spintronic Device, Memory Cell, Memory Array and Read-write Circuit
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
0 cites - US121605292024Reconfigurable PUF Device Based on Fully Electric Field-controlled Domain Wall Motion
INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
0 cites - US121546092024In-memory Computing Using SOT-MRAM
INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
0 cites - US117909682023Spintronic Device, SOT-MRAM Storage Cell, Storage Array and In-memory Computing Circuit
INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
0 cites