Patents/Inventors

Gunho Jo

Clifton, NYUS9 patents

8 Patents

US125503752026
3d-stacked Semiconductor Device Including Gate Structure with RMG Inner Spacer Protecting Lower Work-function Metal Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124905022025
Bipolar Junction Transistors and P-N Junction Diodes Including Stacked Nano-semiconductor Layers
Samsung Electronics Co., Ltd.
0 cites
US124631362025
Integrated Circuit Devices Including Backside Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US123566652025
Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123101062025
Devices Including Stacked Nanosheet Transistors
Samsung Electronics Co., Ltd.
0 cites
US122550992025
Methods of Forming Fin-on-nanosheet Transistor Stacks
Samsung Electronics Co., Ltd.
0 cites
US122243142025
Size-controllable Multi-stack Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118430012023
Devices Including Stacked Nanosheet Transistors
Samsung Electronics Co., Ltd.
0 cites