22 Patents
- US125753282026High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access Memory (MRAM) Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125506232026Nitride Diffusion Barrier Structure for Spintronic Applications
Headway Technologies, Inc.
0 cites - US125018362025Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122494502025Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122133852025Protective Passivation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121676992024Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121677012024Magnetic Tunnel Junction with Low Defect Rate After High Temperature Anneal for Magnetic Device Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120825092024Dual Magnetic Tunnel Junction (DMTJ) Stack Design
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119569712024Cooling for PMA (perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (spin-torque Transfer-magnetic Random Access Memory) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119307162024Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119307172024Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118496462023Nitride Capping Layer for Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117588202023Protective Passivation Layer for Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116965112023Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116839942023Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (hc)/switching Current Ratio
Headway Technologies, Inc.
0 cites - US116721822023Seed Layer for Multilayer Magnetic Materials
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116092962023Method for Measuring Saturation Magnetization of Magnetic Films and Multilayer Stacks
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115979932023Monolayer-by-monolayer Growth of Mgo Layers Using Mg Sublimation and Oxidation
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115732702023Electrical Testing Apparatus for Spintronics Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115694412023Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115631702023Fully Compensated Synthetic Ferromagnet for Spintronics Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites