9 Patents
- US124904282025Semiconductor Device Including Vertical Memory Structure and Separation Structure Each Including Side Surface Slope Changing Portion and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123762862025Vertical Non-volatile Memory Devices Having a Multi-stack Structure with Enhanced Photolithographic Alignment Characteristics
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123639042025Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121855482024Semiconductor Device Having Dummy Structures in a Peripheral Region and Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118958272024Vertical Non-volatile Memory Devices Having a Multi-stack Structure with Enhanced Photolithographic Alignment Characteristics
Samsung Electronics Co., Ltd.
0 cites - US118567702023Semiconductor Device, Method of Manufacturing the Same, and Massive Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118442142023Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116160782023Three-dimensional Semiconductor Memory Devices Having a Source Structure That Overlaps a Buried Insulating Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites