3 Patents
- US124262852025Contextual Formation of a Junction Barrier Diode and a Schottky Diode in a MPS Device Based on Silicon Carbide, and MPS Device
STMICROELECTRONICS S.r.l.
0 cites - US116997482023Normally-off HEMT Transistor with Selective Generation of 2DEG Channel, and Manufacturing Method Thereof
STMICROELECTRONICS S.R.L.
0 cites - 0 cites