Gil Hwan Son

6 Patents

• US122625602025

  Integrated Circuit Devices Including Transistor Stacks Having Different Threshold Voltages and Methods of Forming the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US121425642024

  Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US121257882024

  Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US119233652024

  Integrated Circuit Devices Including Transistor Stacks Having Different Threshold Voltages and Methods of Forming the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US118814552024

  Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117697282023

  Backside Power Distribution Network Semiconductor Package and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites