Gi-gwan Park

5 Patents

• US125637692026

  Semiconductor Device with a Fin-shaped Active Region and an Gate Electrode

  Samsung Electronics Co., Ltd.

  0 cites
• US122257412025

  Semiconductor Device Including Source/drain Having Sidewalls with Convex and Concave Portions

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US120150862024

  Semiconductor Device with a Fin-shaped Active Region and a Gate Electrode

  Samsung Electronics Co., Ltd.

  0 cites
• US119569372024

  Semiconductor Device Having Fin-type Pattern with Varying Widths Along a Center Vertical Line Thereof

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117283452023

  Multi-gate Metal-oxide-semiconductor Field Effect Transistor

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites