6 Patents
- 0 cites
- US122180622025Method of Fabricating a Semiconductor Memory Device Including an Extension Gate Cutting Region
Samsung Electronics Co., Ltd.
0 cites - US121990432025Semiconductor Memory Devices, Methods for Fabricating the Same and Electronic Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US118625662024Semiconductor Device Including a Cell Array Region and an Extension Region
Samsung Electronics Co., Ltd.
0 cites - US117912872023Semiconductor Device Including a Cutting Region Having a Height Greater Than a Height of a Channel Structure
Samsung Electronics Co., Ltd.
0 cites - US115945502023Nonvolatile Memory Device with H-shaped Blocks and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites