Georg Parteder

3 Patents

• US123622302025

  Method of Producing a Semiconductor Body with a Trench, Semiconductor Body with at Least One Trench and Semiconductor Device

  AMS AG

  0 cites
• US122117692025

  Through-substrate via and Method for Manufacturing a Through-substrate Via

  AMS AG

  0 cites
• US117641092023

  Method of Forming a Through-substrate via and a Semiconductor Device Comprising a Through-substrate Via

  AMS AG

  0 cites