Gen Tsutsui

8 Patents

• US125686522026

  Forming Gate All Around Device with Silicon-germanium Channel

  International Business Machines Corporation

  0 cites
• US125686832026

  Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET

  International Business Machines Corporation

  0 cites
• US125572602026

  Stacked-fet SRAM Cell with Bottom Pfet

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US124463202025

  Bottom Contact with Self-aligned Spacer for Stacked Semiconductor Devices

  International Business Machines Corporation

  0 cites
• US124023522025

  Unipolar-fet Implementation in Stacked-fet CMOS

  International Business Machines Corporation

  0 cites
• US121192642024

  Non-step Nanosheet Structure for Stacked Field-effect Transistors

  International Business Machines Corporation

  0 cites
• US118309462023

  Bottom Source/drain for Fin Field Effect Transistors

  INTERNATIONAL BUSINESS MACHINES CORPORATION

  0 cites
• US116161402023

  Vertical Transport Field Effect Transistor with Bottom Source/drain

  International Business Machines Corporation

  0 cites