Ge Yuan

4 Patents

• US125884332026

  Porous Iii-nitrides and Methods of Using and Making Thereof

  Yale University

  0 cites
• US121911252025

  Removing Metal Contamination from Surfaces of a Processing Chamber

  Lam Research Corporation

  0 cites
• US120625382024

  Atomic Layer Etch and Selective Deposition Process for Extreme Ultraviolet Lithography Resist Improvement

  Lam Research Corporation

  0 cites
• US118428882023

  Removing Metal Contamination from Surfaces of a Processing Chamber

  Lam Research Corporation

  0 cites